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march 2010 doc id 14509 rev 2 1/12 12 STS5DNF60L n-channel 60 v, 0.035 ? , 5 a so-8 stripfet? ii power mosfet features standard outline for easy automated surface mount assembly low threshold drive applications switching applications ? automotive description this power mosfet is th e latest development of stmicroelectronics unique ?single feature size? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment st eps allowing remarkable manufacturing reproducibility. figure 1. internal schematic diagram type v dss r ds(on) max i d STS5DNF60L 60 v <0.045 ? 5 a so-8 table 1. device summary order code marking package packaging STS5DNF60L s5dnf60l so-8 tape and reel www.st.com
contents STS5DNF60L 2/12 doc id 14509 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STS5DNF60L electrical ratings doc id 14509 rev 2 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v gs gate- source voltage 15 v i d drain current (continuous) at t c = 25 c 5 a i d drain current (continuous) at t c = 100 c 3 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 20 a p tot (2) 2. p tot = 1.6 w for single operation total dissipation at t c = 25 c 2 w t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data simbol parameter value unit r thj-pcb thermal resistance junction-pcb d.o. (1) 1. when mounted on inch2 fr-4 board, 2 oz cu, t 10 sec, dual operation 62.5 c/w
electrical characteristics STS5DNF60L 4/12 doc id 14509 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 15 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 2 a v gs = 4.5 v, i d = 2 a 0.035 0.045 0.045 0.055 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds =25 v, i d =2 a - 25 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 1030 140 40 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v, i d = 4 a, v gs = 4.5 v (see figure 13 ) - 15 4 4 - nc nc nc table 6. switching times symbol parameter test condi tions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v, i d = 2.2 a, r g = 4.7 ?, v gs = 10 v (see figure 12 ) - 15 28 - ns ns t d(off) t f turn-off delay time fall time v dd = 30 v, i d = 2.2 a, r g = 4.7 ?, v gs = 10 v (see figure 12 ) - 45 10 - ns ns
STS5DNF60L electrical characteristics doc id 14509 rev 2 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 5 20 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 4 a, v gs = 0 - 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 4 a, di/dt = 100 a/s v dd = 20 v (see figure 17 ) - 85 85 2 ns nc a
electrical characteristics STS5DNF60L 6/12 doc id 14509 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characterisics figure 5. transfer characteristics figure 6. source-drain diode forward characteristics figure 7. static drain-source on resistance ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ms ms 4j?# 4c?# 3ingle pulse !-v t p s + 3inglepulse 2 thj pcb ?#7 : thj pcb +
2 thj pcb !-v
STS5DNF60L electrical characteristics doc id 14509 rev 2 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature
test circuits STS5DNF60L 8/12 doc id 14509 rev 2 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform
STS5DNF60L package mechanical data doc id 14509 rev 2 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STS5DNF60L 10/12 doc id 14509 rev 2 dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m 0.6 0.023 s 8 (max.) so-8 mechanical data
STS5DNF60L revision history doc id 14509 rev 2 11/12 5 revision history table 8. document revision history date revision changes 03-mar-2008 1 first release 18-mar-2010 2 figure 2: safe operating area and figure 3: thermal impedance have been changed.
STS5DNF60L 12/12 doc id 14509 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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